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R&D: Phase-Change-Assisted Spin-Transfer Torque Switching in Perpendicular Magnetic Tunnel Junctions

Results demonstrate that PCMA-STT switching strategy most suitable for MTJ with large perpendicular magnetic anisotropy, paving promising way to replace NOR flash memories.

Applied Physics Letters has published an article written by Shen Li, Fert Beijing Research Institute, School of Integrated Circuit Science and Engineering & Beijing Advanced Innovation Center for Big Data and Brain Computing (BDBC), Beihang Unive...

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