R&D: Investigating 3D NAND Flash Read Disturb Reliability With Extreme Value Analysis
Such technique proved that die reliability characterized through extreme events analysis can be predicted using low number of samples and generally holds good prediction features for distribution tail events.
This is a Press Release edited by StorageNewsletter.com on November 26, 2021 at 2:01 pmIEEE Transactions on Device and Materials Reliability has published an article written by Cristian Zambelli, Dipartimento di Ingegneria, Universita degli Studi di Ferrara, Ferrara, 44122 Italy, Luca Crippa, Rino Micheloni, Flash Signal Processing Labs, Microchip Corp., Vimercate, 20871 Italy, and Piero Olivo, Dipartimento di Ingegneria, Universita degli Studi di Ferrara, Ferrara, 44122 Italy.
Abstract: “The storage systems relying on the 3D NAND Flash technology require an extensive modeling of their reliability in different working corners. This enables the deployment of system-level management routines that do not compromise the overall performance and reliability of the system itself. Dedicated parametric statistical models have been developed so far to capture the evolution of the memory reliability, although limiting the description to an average behavior rather than extreme cases that can disrupt the storage functionality. In this work, we validate the application of an extreme statistics tool, namely the Points-Over-Threshold method, to characterize the read disturb reliability of a 3D NAND Flash chip. Such technique proved that the die reliability characterized through extreme events analysis can be predicted using a low number of samples and generally holds good prediction features for distribution tail events.“
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