IP2IPO Innovations Assigned Patent

IP2IPO Innovations Ltd., London, Great Britain, has been assigned a patent (11,152,562) developed by Zemen, Jan, Celakovice, CZ, Mihai, Andrei Paul, Zou, Bin, Boldrin, David, and Donchev, Evgeniy, London, Great Britain, for a “non-volatile memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile memory cell comprising: a storage layer comprised of a ferromagnetic or ferroelectric material in which data is recordable as a direction of magnetic or electric polarisation, a piezomagnetic layer comprised of an antiperovskite piezomagnetic material selectively having a first type of effect on the storage layer and a second type of effect on the storage layer dependent upon the magnetic state and strain in the piezomagnetic layer, and a strain inducing layer for inducing a strain in the piezomagnetic layer thereby to switch from the first type of effect to the second type of effect.”

The patent application was filed on December 6, 2017 (16/470,039).