Mosaid Technologies Assigned Patent
3D nonvolatile memory cell structure with upper body connection
By Francis Pelletier | November 5, 2021 at 2:00 pmMosaid Technologies Inc., Ottawa, Canada, has been assigned a patent (RE48,766) developed by Rhie, Hyoung Seub, Ottawa, Canada, for a “three-dimensional nonvolatile memory cell structure with upper body connection.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A three-dimensional integrated circuit non-volatile memory array includes a memory array of vertical channel NAND flash strings connected between a substrate source line and upper layer connection lines which each include n-type drain regions and p-type body line contact regions alternately disposed on each side of undoped or lightly doped string body regions so that each NAND flash string includes a vertical string body portion connected to a horizontal string body portion formed from the string body regions of the upper body connection lines.”
The patent application was filed on December 4, 2019 (16/703,575).
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