Institute of Microelectronics/Chinese Academy of Sciences Assigned Two Patents

MRAM manufacturing, electronic device including MRAM
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, has been assigned a patent (11,127,783) developed by Zhu, Huilong, Poughkeepsie, NY, Li, Junjie, Beijing, China, and Zhao, Chao, Kessel-lo, Belgium, for “MRAM, method of manufacturing the same, and electronic device including the MRAM.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A Magnetic Random Access Memory, MRAM, a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnetic tunnel junction on the switch device and electrically connected to a first terminal of the switch device. An active region of the switch device at least partially includes a single-crystalline semiconductor material. Each of the memory cell columns is disposed on a corresponding bit line, and a second terminal of each of the respective switch devices in the memory cell column is electrically connected to the corresponding bit line. Each of the word lines is electrically connected to a control terminal of the respective switch devices of the respective memory cells in a corresponding memory cell row.”

The patent application was filed on November 1, 2018 (16/177,999).

Nonvolatile resistive memory and manufacturing
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, has been assigned a patent (11,101,321) developed by Banerjee, Writam, Liu, Ming, Liu, Qi, Lv, Hangbing, Sun, Haitao, and Zhang, Kangwei, Beijing, China, for a “nonvolatile resistive memory device and manufacturing method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A nonvolatile resistive switching memory comprising an insulating substrate, a lower electrode, a lower graphene barrier layer, a resistive switching functional layer, an upper graphene barrier layer, and an upper electrode, wherein the lower and/or the upper graphene barrier layer is/are capable of preventing the metal ions/atoms in the lower/upper metal electrode from diffusing into the resistive switching functional layer under an applied electric field. According to the nonvolatile resistive switching memory device of the present invention and manufacturing method thereof, a monolayer or multilayer graphene film as a metal ions/atoms barrier layer is inserted between the upper/lower metal electrode and the resistive switching functional layer, which is capable of preventing the metal ions/atoms in the lower/upper metal electrode from diffusing into the resistive switching functional layer during the programming or erasing process of the resistive switching device, thereby improving the reliability of the device.”

The patent application was filed on September 6, 2015 (15/572,035).