Everspin Assigned Ten Patents

Shared spin-orbit-torque write line in spin-orbit-torque MRAM
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,127,896) developed by Alam, Syed M., Andre, Thomas, Austin, TX, Mancoff, Frederick, Chandler, AZ, and Ikegawa, Sumio, Phoenix, AZ, for a “shared spin-orbit-torque write line in a spin-orbit-torque MRAM.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure is drawn to, among other things, a magnetoresistive memory. The magnetoresistive memory comprises a plurality of magnetoresistive memory devices, wherein each magnetoresistive memory device includes a fixed magnetic region, a free magnetic region, and an intermediate region disposed in between the fixed and free magnetic regions. The magnetoresistive memory further comprises a first conductor extending adjacent each magnetoresistive memory device of the plurality of magnetoresistive devices, wherein the first conductor is in electrical contact with the free magnetic region of each magnetoresistive memory device.”

The patent application was filed on January 18, 2019 (16/251,230).

Combined spin-orbit torque and spin-transfer torque switching for magnetoresistive devices
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,114,608) developed by Sun, Jijun, Chandler, AZ, Shimon,, Singapore, Singapore, and Chia, Han-Jong, Hsinchu, Taiwan, for “combined spin-orbit torque and spin-transfer torque switching for magnetoresistive devices and methods therefor.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Spin-Hall (SH) material is provided near free regions of magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SH material injects spin current into the free regions such that spin torque is applied to the free regions. The spin torque generated from SH material can be used to switch the free region or to act as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction, in order to improve the reliability, endurance, or both of the magnetoresistive device. Further, one or more additional regions or manufacturing steps may improve the switching efficiency and the thermal stability of magnetoresistive devices.”

The patent application was filed on July 23, 2019 (16/519,741).

Spin orbit torque magnetoresistive devices
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,088,318) developed by Sun, Jijun, Chandler, AZ, for “spin orbit torque magnetoresistive devices and methods therefor.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Spin-orbit-torque (SOT) lines are provided near free regions in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT lines injects spin current into the free regions such that spin torque is applied to the free regions. The spin torque generated from a SOT switching line can be used to switching the free region or to act as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction, in order to improve the reliability, endurance, or both of the magnetoresistive device. Further, one or more additional layers or regions may improve the SOT switching efficiency and the thermal stability of magnetoresistive devices including SOT lines.”

The patent application was filed on April 5, 2019 (16/376,644).

Structures and methods for shielding magnetically sensitive components
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,088,317) developed by Lin, Wenchin, Chandler, AZ, and Janesky, Jason, Gilbert, AZ, for “structures and methods for shielding magnetically sensitive components.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Structures and methods are disclosed for shielding magnetically sensitive components. One structure includes a substrate, a bottom shield deposited on the substrate, a magnetoresistive semiconductor device having a first surface and a second surface opposing the first surface, the first surface of the magnetoresistive semiconductor device deposited on the bottom shield, a top shield deposited on the second surface of the magnetoresistive semiconductor device, the top shield having a window for accessing the magnetoresistive semiconductor device, and a plurality of interconnects that connect the magnetoresistive semiconductor device to a plurality of conductive elements.”

The patent application was filed on March 16, 2018 (15/923,842).

Manufacturing magnetoresistive device
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,043,630) developed by Aggarwal, Sanjeev, Scottsdale, AZ, and Deshpande, Sarin A., San Jose, CA, for a “method of manufacturing a magnetoresistive device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetoresistive device may include an intermediate region positioned between a magnetically fixed region and a magnetically free region, and spin Hall channel region extending around a sidewall of at least the magnetically free region. An insulator region may extend around a portion of the sidewall such that the insulator region contacts a first portion of the sidewall and the spin Hall channel region contacts a second portion of the sidewall.”

The patent application was filed on November 26, 2019 (16/695,396).

Integration of magnetoresistive structure
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,031,546) developed by Nagel, Kerry Joseph, Scottsdale, AZ, Smith, Kenneth H., Hossain, Moazzem, Chandler, AZ, and Aggarwal, Sanjeev, Scottsdale, AZ, for a “method of integration of a magnetoresistive structure.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of manufacturing one or more interconnects to magnetoresistive structure comprising (i) depositing a first conductive material in a via; (2) etching the first conductive material wherein, after etching the first conductive material a portion of the first conductive material remains in the via, (3) partially filling the via by depositing a second conductive material in the via and directly on the first conductive material in the via; (4) depositing a first electrode material in the via and directly on the second conductive material in the via; (5) polishing a first surface of the first electrode material wherein, after polishing, the first electrode material is (i) on the second conductive material in the via and (ii) over the portion of the first conductive material remaining in the via; and (6) forming a magnetoresistive structure over the first electrode material.”

The patent application was filed on November 19, 2018 (16/194,523).

Stacked magnetoresistive structures
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,005,031) developed by Nagel, Kerry, and Aggarwal, Sanjeev, Scottsdale, AZ, for “stacked magnetoresistive structures and methods therefor.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetoresistive device may include a first plurality of magnetic tunnel junction (MTJ) bits arranged in a first XY plane, and a second plurality of MTJ bits arranged in a second XY plane that is spaced apart from the first XY plane in a Z direction. And, the MTJ bits of the first plurality of MTJ bits may be spaced apart from the MTJ bits of the second plurality of MTJ bits in the X and Y directions.”

The patent application was filed on September 5, 2019 (16/561,418).

Magnetoresistive devices
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,004,899) developed by Aggarwal, Sanjeev, Scottsdale, AZ, and Sun, Jijun, Chandler, AZ, for “magnetoresistive devices and methods therefor.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetoresistive device may include a first ferromagnetic region, a second ferromagnetic region, and an intermediate region positioned between the first ferromagnetic region and the second ferromagnetic region. The intermediate region may be formed of a dielectric material and comprise at least two different metal oxides.”

The patent application was filed on April 26, 2019 (16/395,396).

Magnetoresistive stacks
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (10,971,545) developed by Aggarwal, Sanjeev, Scottsdale, AZ, Conley, Kevin, San Jose, CA, and Deshpande, Sarin A., Chandler, AZ, for “magnetoresistive stacks and methods therefor.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetoresistive device may include multiple magnetic tunnel junction (MTJ) stacks separated from each other by one or more dielectric material layers and electrically conductive vias extending through the one more dielectric material layers. Each MTJ stack may include multiple MTJ bits arranged one on top of another and the electrically conductive vias may be configured to electrically access each MTJ bit of the multiple MTJ stacks.”

The patent application was filed on January 11, 2019 (16/245,783).

Magnetic memory using spin-orbit torque
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (10,937,948) developed by Chia, Han-Jong, Hsinchu, Taiwan, for a “magnetic memory using spin-orbit torque.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT segments injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction in order to improve the efficiency of the switching current applied to the magnetoresistive device.”

The patent application was filed on March 2, 2020 (16/806,533).