Avalanche Technology Assigned Five Patents

Magnetic memory cell including two-terminal selector
Avalanche Technology, Inc., Fremont, CA, has been assigned a patent (11,127,787) developed by Yang, Hongxin, Newark, CA, Yen, Bing K., Cupertino, CA, and Zhang, Jing, Los Altos, CA, for a “magnetic memory cell including two-terminal selector device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween, a first active electrode formed adjacent to the first inert electrode, and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes at least one conductor layer interleaved with insulating layers.”

The patent application was filed on February 18, 2020 (16/793,349).

Magnetic memory array incorporating selectors and manufacturing
Avalanche Technology, Inc., Fremont, CA, has been assigned a patent (11,127,782) developed by Yang, Hongxin, Newark, CA, and Yen, Bing K., Cupertino, CA, for “magnetic memory array incorporating selectors and method for manufacturing the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present invention is directed to a memory cell array comprising an array of magnetic memory elements arranged in rows and columns, a plurality of electrodes, each of which is formed adjacent to a respective one of the array of magnetic memory elements, a plurality of first conductive lines, each of which is connected to a respective row of the array of magnetic memory elements along a row direction, and a plurality of composite lines. Each composite line includes a volatile switching layer connected to a respective column of the plurality of electrodes along a column direction, an electrode layer formed adjacent to the volatile switching layer, and a second conductive line formed adjacent to the electrode layer. The dimension of the volatile switching layer may be substantially larger than the size of the magnetic memory element along the row direction.”

The patent application was filed on June 29, 2018 (16/024,601).

Multilayered seed for perpendicular magnetic structure
Avalanche Technology, Inc., Fremont, CA, has been assigned a patent (10,950,659) developed by Wang, Zihui, Mountain View, CA, and Huai, Yiming, Pleasanton, CA, for a “multilayered seed for perpendicular magnetic structure.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present invention is directed to a perpendicular magnetic structure including a first seed layer comprising a first transition metal and nitrogen, a second seed layer deposited on top of the first seed layer, and a third seed layer deposited on top of the second seed layer. One of the second and third seed layers comprises cobalt, iron, and boron. The other one of the second and third seed layers comprises chromium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the third seed layer and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a second transition metal. The first transition metal is titanium or tantalum. The second transition metal is one of nickel, platinum, palladium, or iridium.”

The patent application was filed on June 16, 2020 (16/903,172).

Implementing MRAM for mobile system-on-chip boot
Avalanche Technology, Inc., Fremont, CA, has been assigned a patent (10,936,327) developed by Le, Ngon Van, and Tadepalli, Ravishankar, Fremont, CA, for a “method of implementing magnetic random access memory (MRAM) for mobile system-on-chip boot.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present invention is directed to a method for booting a system-on-chip (SoC) including the steps of directly executing a boot software from an on-chip magnetic random access memory (MRAM) residing on a same semiconductor as the SoC, directly executing an operating system software from an external MRAM by the SoC without loading the operating system into a volatile memory, and directly executing an application software from the external MRAM by the SoC, wherein the external MRAM is coupled to the SoC and is configured for storing the operating system software and the application software.”

The patent application was filed on March 3, 2020 (16/808,099).

Magnetic memory element incorporating perpendicular enhancement layer
Avalanche Technology, Inc., Fremont, CA, has been assigned a patent (10,910,555) developed by Wang, Zihui, Mountain View, CA, Hao, Xiaojie, Fremont, CA, Hu, Longqian, Milpitas, CA, and Huai, Yiming, Pleasanton, CA, for a “magnetic memory element incorporating perpendicular enhancement layer.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating three magnetic free layers separated by two perpendicular enhancement layers (PELs) and having a variable magnetization direction substantially perpendicular to layer planes thereof, an insulating tunnel junction layer formed adjacent to the magnetic free layer structure, a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure, a second magnetic reference layer separated from the first magnetic reference layer by a third perpendicular enhancement layer, an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.”

The patent application was filed on March 26, 2020 (16/831,519).