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R&D: Charge Trap Modeling Based on Mobility–Lifetime Product for NAND Flash Program Operation

Simulated trapped charge distribution indicates that average trap distance moves closer to tunnel layer as program time elapses.

Japanese Journal of Applied Physics has published an article written by Geon Woong Kim, and Seung Jae Baik, School of Electronic and Electrical Engineering, Hankyong National University, Gyeonggi-do 17579, Republic of Korea.
Abstract: “High-density...

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