Xi’an Jiaotong University Assigned Patent

Xi’an Jiaotong University, Xi’an, China, has been assigned a patent (11,114,145) developed by Min, Tai, San Jose, CA, Hao, Runzi, Wang, Lei, and Zhou, Xue, Xi’an, China, for “three-dimensional magnetic device and magnetic memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Disclosed is a three-dimensional magnetic device based on a spin Hall effect which includes an internal electrode, at least one magnetic junction and at least one external electrode. The internal electrode, the at least one magnetic junction and the at least one external electrode have columnar structures. Each of the at least one magnetic junction comprises a magnetic free layer, a magnetic reference layer and a non-magnetic spacing layer between magnetic free layer and magnetic reference layer. The magnetic free layer is in contact with internal electrode, and the magnetic reference layer in each of the at least one magnetic junction is in contact with a corresponding one of the at least one external electrode. The three-dimensional magnetic device may be stacked in a normal direction of the bottom surface of the internal electrode. Magnetization reversal of three-dimensional magnetic device may be realized by a combination of a spin-orbit torque and a spin transfer torque. The magnetic device has advantages of reduced heating, improved reliability and stability, high storage density while ensuring thermal stability.”

The patent application was filed on April 10, 2020 (16/845,593).