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Silicon Storage Technology Assigned Patent

Charge pump for use in non-volatile flash memory

Silicon Storage Technology, Inc., San Jose, CA, has been assigned a patent (11,120,881) developed by Tran, Hieu Van, Ly, Anh, Vu, Thuan, San Jose, CA, Nguyen, Kha, Pham, Hien, Ho Chi Minh, Vietnam, Hong, Stanley, and Trinh, Stephen T., San Jose, CA, for a charge pump for use in non-volatile flash memory devices.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Numerous embodiments of an improved charge pump design are disclosed for generating the high voltages necessary to perform erase and program operations in non-volatile flash memory devices. In these embodiments, each boost stage in the charge pump is modified to overcome a deficiency in prior art charge pumps whereby voltage actually would decrease in the final boost stage. These modifications include the addition of one or more of a clock doubling circuit, a local self-precharge circuit, a feed-forward precharge circuit, a feed-backward precharge circuit, and a hybrid circuit comprising NMOS and PMOS transistors and diodes.

The patent application was filed on October 20, 2020 (17/075,691).

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