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Lapis Semiconductor Assigned Patent

Semiconductor storage for high-speed burst access

Lapis Semiconductor Co., Ltd., Yokohama, Japan, has been assigned a patent (11,087,828) developed by Yamada, Takashi, Yokohama, Japan, for a semiconductor storage device for high-speed burst access.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”In writing and reading data at a semiconductor storage device, control is carried out such that, at a time of a burst mode, in a case in which a value of a block address which is, from addresses assigned to a region of an internal address, an address for selecting a sense amplifier block from plural sense amplifier blocks, is a largest value, a first sense amplifier block and a second sense amplifier block are made to access different banks, and, in case in which the value of the block address is not the largest value, the first sense amplifier block and the second sense amplifier block are made to access a same bank of plural banks.

The patent application was filed on February 27, 2020 (16/803,964).

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