Huazhong University of Science and Technology Assigned Patent

Huazhong University of Science and Technology, Hubei, China, has been assigned a patent (11,056,644) developed by Miao, Xiangshui, Tong, Hao, and Ma, Lifan, Wuhan, China, for a “phase-change memory cell with vanadium oxide based switching layer.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase-change memory cell, including, in sequence in the following order: a first electrode layer, a switching layer comprising vanadium oxide (VO.sub.x) material, a phase-change material layer, and a second electrode layer, is provided. The switching layer is adapted to control the phase-change material layer to switch between a crystalline state and an amorphous state when a voltage is applied to the first electrode layer and the second electrode layer.”

The patent application was filed on November 11, 2019 (16/679,355).