Aspiring Sky Co. Limited, Hong Kong, China, has been assigned a patent (11,087,823) developed by Luo, Zhijiong, Hopewell Township, PA, and Zhao, Xuntong, Shanghai, China, for a “nonvolatile memory structures with DRAM.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Technologies for a multi-bit non-volatile dynamic random access memory (nvDRAM) device, which may include a DRAM array having a plurality of DRAM cells with single or dual transistor implementation and a non-volatile memory (NVM) array having a plurality of NVM cells with single or dual transistor implementations, where the DRAM array and the NVM array are arranged by rows of word lines and columns of bit lines. The nvDRAM device may also include one or more of isolation devices coupled between the DRAM array and the NVM array and configured to control connection between the dynamic random access bit lines (BLs) and the non-volatile BLs. The word lines run horizontally and may enable to select one word of memory data, whereas bit lines run vertically and may be connected to storage cells of different memory address.”
The patent application was filed on December 19, 2019 (16/720,082).