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R&D: Designing Zero-Dimensional Dimer-Type All-Inorganic Perovskites for Fast Switching Memory

Results demonstrate feasibility to design memory with fast switching speed.

Nature Communications has published an article written by Youngjun Park, Seong Hun Kim, Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea, Donghwa Lee, Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea, and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang, Korea, and Jang-Sik Lee, Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.

Abstract: Resistive switching memory that uses halide perovskites (HP) has been considered as next-generation storage devices due to low operation voltage and high on/off ratio. However, the memory still faces challenges for stable operation with fast switching speed, which hinders the practical application. Thus, it should be considered from the stage of designing the HP for memory applications. Here, we design the perovskite memory using a high-throughput screening based on first-principles calculations. Total 696 compositions in four different crystal structures are investigated and essential parameters including stability, vacancy formation, and migration are considered as the descriptor. We select dimer-Cs3Sb2I9 as an optimal HP for memory; the device that uses dimer-Cs3Sb2I9 has ultra-fast switching speed (~20 ns) compared to the device that uses layer-Cs3Sb2I9 (>100 ns). The use of lead-free perovskite avoids environmental problems caused by lead in perovskite. These results demonstrate the feasibility to design the memory with ultra-fast switching speed.“

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