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NEO Semiconductor Assigned Patent

NAND flash memory

NEO Semiconductor, Inc., San Jose, CA, has been assigned a patent (11,056,190) developed by Hsu, Fu-Chang, San Jose, CA, for methods and apparatus for NAND flash memory.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Methods and apparatus for NAND flash memory are disclosed. In an embodiment, a method is provided for programming a NAND flash memory includes setting programming conditions on word lines to set up programming of multiple memory cells associated with multiple bit lines, and sequentially enabling bit line select gates to load data from a page buffer to the multiple bit lines of the memory. After each bit line is loaded with selected data, an associated bit line select gate is disabled so that the selected data is maintained on the bit line using bit line capacitance. The method also includes waiting for a programming interval to complete after all the bit lines are loaded with data to program the multiple memory cells associated with the multiple bit lines. At least a portion of the multiple memory cells are programmed simultaneously.

The patent application was filed on November 18, 2019 (16/687,556).