R&D: Flexible Multi-Level Quasi-Volatile Memory Based on Organic Vertical Transistor

Nano Research has published an article written by Huihuang Yang, Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China, Qian Yang, Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China, Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China, and Zhicheng College, Fuzhou University, Fuzhou, 350002, China, Lihua He, Xiaomin Wu, Changsong Gao, Xianghong Zhang, Liuting Shan, Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China, Huipeng Chen, and Tailiang Guo, Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China, and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China.

Abstract: “Driven by important megatrends such as cloud computing, artificial intelligence, and the Internet of Things, as a device used to store programs and data in computing systems, memory is struggling to catch up with the explosive growth of data and bandwidth requirements in the system. However, the ‘storage wall’ between non-volatile memory and volatile memory retards the further improvement of modern memory computing systems. Herein, a quasi-volatile transistor memory based on organic polymer/perovskite quantum dot blend was fabricated using the vertical transistor configuration. Contributing to vertical structure and appropriate doping ratio of blend film, the quasi-volatile memory device displayed 1,560 times longer data retention time (> 100 s) with respect to the dynamic random access memory and fast data programming speed (20 µs) in which was far more quickly than that of other organic non-volatile memories to fill the gap between volatile and non-volatile memories. Moreover, the device retention characteristics could be further promoted under the photoelectric synergistic stimulation, which also provided the possibility to reduce electric writing condition. Furthermore, the quasi-volatile memory device showed good electrical performance under bending conditions. This work provides a simple solution to fabricate multi-level quasi-volatile memory, which opens up a whole new avenue of ‘universal memory’ and lays a solid foundation for low power and flexible random access memory devices.“