R&D: High-Performance Resistive Switching Memory With Embedded Molybdenum Disulfide Quantum Dots

Applied Physics Letters has published an article written by Xinna Yu, Ke Chang, Anhua Dong, State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China, and Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China, Zhikai Gan, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China, Kang’an Jiang, State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China, and Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China, Yibin Ling, Department of Physics, University of California, Berkeley, California 94720, USA, Yiru Niu, Diyuan Zheng, Xinyuan Dong, Renzhi Wang, Yizhen Li, Zhuyikang Zhao, Peng Bao, Binbin Liu, Yuhong Cao, Su Hu, and Hui Wang, State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China, and Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China.

Abstract: “With the advent of the big-data era, conventional memory technologies and devices are facing enormous challenges. Resistive random access memory (RRAM) is an emerging memory technology that has aroused widespread interest for its immense potential. However, there remain some problems in resistive switching devices, such as high switching voltages, random voltages distribution, wide variation in resistance states, and poor endurance. In this work, molybdenum disulfide quantum dots are applied to resistive switching devices. The resulting devices exhibit improved performance. They have ultra-low and centralized switching voltages, uniformly distributed resistance states, good endurance, and extremely large on/off ratios. This performance optimization may derive from the convergence of electric field distribution around molybdenum disulfide quantum dots, which enhances the formation of localized conductive filaments. In this Letter, we propose an approach for improving resistive switching properties, significantly facilitating the development of data storage and related applications.“

This study was supported by the National Natural Science Foundation of China under Grant Nos. 11874041, 61574090, 11374214, 10974135, and 62004023. The authors would like to thank Ms. Y. Wang from Advanced Electronic Materials and Devices (AEMD) of Shanghai Jiao Tong University for their technical support.