R&D: Exploring Phase‐Change Memory From Material Systems to Device Physics

Physica Status Solid Rapid Research Letters has published an article written by Yanyun Ren, Institute for Advanced Study, Shenzhen University, Shenzhen, 518060 P. R. China, Ruoyao Sun, Centre for Advanced Optoelectronic Functional Materials Research Key Laboratory for UV Light-Emitting Materials and Technology, Northeast Normal University, Changchun, 130000 P. R. China, Stephenie Hiu Yuet Chen, Harrow International School Hong Kong, 38 Tsing Ying Road, Tuen Mun, New Territories, Hong Kong, P. R. China, Chunyu Du, Su-Ting Han, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060 P. R. China, and Ye Zhou, Institute for Advanced Study, Shenzhen University, Shenzhen, 518060 P. R. China.

Abstract: “To deal with the growing demand for data storage and processing, phase‐change memory (PCM) provides one of the most promising candidates for next‐generation nonvolatile data storage and neuromorphic computing applications. A lot of effort has been made toward optimizing the materials and device design; thus, excellent device performances have been achieved including high density, fast switching speed, great endurance, and retention. In addition, the widely tunable optical characteristics of PCMs are irresistibly attractive for optoelectronic or all‐optical applications with unprecedented bandwidth, low energy consumption, and multilevel data storage. Herein, the materials system and switching mechanisms on experimental and modeling methods for PCM designs and applications are discussed. Electric‐domain and optical‐domain PCM‐based artificial synapses/neurons and their applications in neuromorphic computing are also reviewed. Finally, the future prospects and challenges of PCM‐based applications on materials, devices, algorithms, and system levels are highlighted.“