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R&D: Exploring Phase‐Change Memory From Material Systems to Device Physics

Future prospects and challenges of PCM‐based applications on materials, devices, algorithms, and system levels are highlighted.

Physica Status Solid Rapid Research Letters has published an article written by Yanyun Ren, Institute for Advanced Study, Shenzhen University, Shenzhen, 518060 P. R. China, Ruoyao Sun, Centre for Advanced Optoelectronic Functional Materials Research ...

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