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Computex: Micron Unveils Memory and Storage Innovations Including 176-layer NAND and 1α DRAM Technology

As well as 3400 and 2450 M.2 SSD, 1α-based LPDDR4x and DDR4 memory, and 128 and 256GB 96-layer NAND portfolio of UFS 3.1 managed NAND products for automotive applications

At Computex, Micron Technology, Inc. unveiled memory and storage innovations across its portfolio based on its 176-layer NAND and 1α (1-alpha) DRAM technology, as well as the first Universal Flash Storage (UFS) 3.1 solution for automotive application...

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