eMemory Technology Assigned Patent

eMemory Technology Inc., Hsin-Chu, Taiwan, has been assigned a patent (10,991,430) developed by Lai, Tsung-Mu, Chen, Chih-Hsin, and Lin, Chun-Fu, Hsinchu County, Taiwan, for a “non-volatile memory cell compliant to a near memory computation system.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A non-volatile memory cell includes a storage transistor having a first terminal, a second terminal, and a gate terminal. During a program operation, the first terminal of the storage transistor receives a data voltage according to a weighting to be stored in the non-volatile memory cell, the second terminal of the storage transistor is floating, and the gate terminal of the storage transistor is coupled to a program voltage. The program voltage is greater than the data voltage.”

The patent application was filed on October 30, 2019 (Appl. No.16/669,480).