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SanDisk/Western Digital Assigned Eighteen Patents

3D memory device containing eye-shaped contact via structures located in laterally-undulating trenches, 3D memory device with mobility-enhanced vertical channels, three-dimensional flat NAND memory including wavy word lines, 3D device with bonded structures including support die, differential dbus scheme for low-latency random read for NAND memories, ferroelectric memory device with select gate transistor, mitigating grown bad blocks, concurrent programming of multiple cells for non-volatile memory, adaptive VPASS for 3D flash memory with pair string structure, dynamic bit-scan techniques for memory device programming, VHSA-VDDSA generator merging scheme, low latency data transfer, microcontroller for non-volatile memory with combinational logic, 3D memory containing channels with laterally pegged dielectric cores, reprogramming memory cells to tighten threshold voltage distributions and improve data retention, ferroelectric device with multiple polarization states, Multi-tier three-dimensional memory with dielectric support pillars, 3D memory having multi-stack bonded structure using logic die and multiple 3D memory dies

Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches
SanDisk Technologies LLC, (acquired by Western Digital Corp.), Addison, TX, has been assigned a patent (10,985,176) developed by Iw...

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