R&D: Next Gen Ferroelectric Materials for Semiconductor Process Integration and Applications

Journal of Applied Physics has published an article written by T. Mikolajick, NaMLab gGmbH, Noethnitzer Str. 64, D-01187 Dresden, Germany, and Institute of Semiconductors and Microsystems (IHM), TU Dresden, D-01062 Dresden, Germany, S. Slesazeck, H. Mulaosmanovic, NaMLab gGmbH, Noethnitzer Str. 64, D-01187 Dresden, Germany, M. H. Park, School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan 46241, Republic of Korea, S. Fichtner, Materials and Processes for Micro/Nanosystem Technologies, University of Kiel, Institute for Material Science, Kaiserstr. 2, 24143 Kiel, Germany, P. D. Lomenzo, M. Hoffmann, and U. Schroeder, NaMLab gGmbH, Noethnitzer Str. 64, D-01187 Dresden, Germany.

Abstract: “Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.“