Yangtze Memory Technologies Assigned Patent

Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (10,978,153) developed by Liu, Hongtao, Jiang, Song Min, Huang, Dejia, Huang, Ying, and Wei, Wenzhe, Wuhan, China, for “3D NAND flash and operation method thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An operation method for a 3D NAND flash includes writing data into a WLn layer of the plurality of wordline layers of an unselect bit line of the plurality of bit lines in a write operation, and applying a first pass voltage on at least a first WL layer of the plurality of wordline layers of the unselect bit line of the plurality of bit lines and applying a second pass voltage on at least a second WL layer of the plurality of wordline layers of the unselect bit line of the plurality of bit lines, wherein the first pass voltage is lower than the second pass voltage to reduce a difference of channel potential between the WLn layer and the at least a first WL layer when a pre-pulse phase is removed from a verify phase.”

The patent application was filed on June 21, 2020 (16/907,299).