Ferroelectric Memory Assigned Patent

Ferroelectric Memory GmbH, Dresden, Germany, has been assigned a patent (10,978,129) developed by Muller, Stefan, Dresden, Germanyl, for “memory cell, memory cell arrangement and methods thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory cell is provided that may include: a field-effect transistor structure including a channel and a gate structure disposed adjacent to the channel, the gate structure including: one or more remanent-polarizable layers, a gate electrode, wherein the one or more remanent-polarizable layers are disposed between the gate electrode and the channel, and one or more charge storage structures disposed between at least one of the one or more remanent-polarizable layers and the channel and/or the one or more remanent-polarizable layers and the gate electrode, the one or more charge storage structures are configured to stabilize a polarization state associated with the one or more remanent-polarizable layers by trapping charge in the one or more charge storage structures.”

The patent application was filed on July 15, 2020 (16/930,126).