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Winbond Assigned Six Patents

Updating cryptographic keys stored in non-volatile memory, semiconductor storage, memory devices and fabrication, flash memory storage, power on reset method for resistive memory storage, memory storage and operating with multiple modes for refresh operation

Updating cryptographic keys stored in non-volatile memory
Winbond Electronics Corporation, Taichung, Taiwan, has been assigned a patent (10,951,403) developed by Kaluzhny, Uri, Beit Shemesh, Israel, and Luko, Mark, Herzliya, Israel, for a updating cryptographic keys stored in non-volatile memory.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method is provided for generating a new instance of an N-bit cryptographic key for storage in a non-volatile memory (NVM) in which unprogrammed cells have a particular binary value. The method includes generating a random N-bit updating sequence, and generating the new instance of the N-bit cryptographic key by negating each bit in a current instance of the N-bit cryptographic key that has the particular binary value and differs from a correspondingly-positioned bit in the random N-bit updating sequence, without negating any bits in the current instance of the N-bit cryptographic key that do not have the particular binary value. Other embodiments are also described.

The patent application was filed on December 3, 2018 (16/207,207).

Semiconductor storage
Winbond Electronics Corporation, Taichung, Taiwan, has been assigned a patent (10,937,492) developed by Hattori, Norio, Kanagawa, Japan, for a semiconductor storage apparatus.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A semiconductor storage apparatus of high convenience, which improves utilization efficiency of a memory region, is provided. A flash memory provided in the disclosure includes a memory controller and an NAND memory device. The memory controller includes an SRAM, an RRAM, and a write/selector. The SRAM stores a conversion table that converts a logical address into a physical address. The RRAM temporarily stores a small amount of data which should be programmed. The write/selector selectively writes the to-be-programmed data into the RRAM or an NAND memory unit of the NAND memory device.

The patent application was filed on January 14, 2020 (16/742,862).

Memory devices and fabrication
Winbond Electronics Corporation, Taichung, Taiwan, has been assigned a patent (10,910,384) developed by Yen, Ying-Chu, and Chang, Wei-Che, Taichung, Taiwan, for a semiconductor storage apparatus.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method of fabricating a memory device includes firming an oxide layer on a semiconductor substrate, and forming an isolation structure in the semiconductor substrate and the oxide layer to define an active area. The method also includes forming a word line and a bit line in the semiconductor substrate, wherein the bit line is above the word line. The method further includes removing the oxide layer to form a recess between the isolation structure and the bit line, and forming a storage node contact in the recess. In addition, from a top view, the storage node contact of the memory device overlaps a corresponding portion of the active area.

The patent application was filed on May 14, 2019 (16/411,584).

Flash memory storage
Winbond Electronics Corporation, Taichung, Taiwan, has been assigned a patent (10,908,824) developed by Lin, Hung-Hsueh, Taichung, Taiwan, for flash memory storage device and method thereof.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A flash memory storage device including a memory cell array and a memory control circuit is provided. The memory cell array includes a plurality of well regions. Each of the well regions includes a plurality of memory blocks and a record block. The memory control circuit is coupled to the memory cell array. The memory control circuit is configured to perform an erase operation on the memory blocks of each of the well regions and record erase times of each of the well regions into the respective record block. In addition, a method for operating a flash memory storage device is also provided.

The patent application was filed on November 8, 2018 (16/183,760).

Power on reset method for resistive memory storage
Winbond Electronics Corporation, Taichung, Taiwan, has been assigned a patent (10,839,899) developed by Wang, Ping-Kun, Liao, Shao-Ching, Chen, Yu-Ting, Lin, Ming-Che, Wu, Chien-Min, and Ho, Chia-Hua, Taichung, Taiwan, for a power on reset method for resistive memory storage device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A power on reset method for a resistive memory storage device is provided and includes performing a forming procedure on a memory cell of the resistive memory storage device. The forming procedure includes applying at least one forming voltage and at least one reset voltage to the memory cell. The forming procedure further includes a thermal step. The step of applying at least one reset voltage to the memory cell may be preformed before or after the thermal step. After one forming voltage is applied, if the memory cell passes verification, the next forming voltage is not applied to the memory cell. After the thermal step, if the memory cell passes verification, the next forming voltage is not applied to the memory cell. In addition, after one reset voltage is applied, if the memory cell passes verification, the next reset voltage is not applied to the memory cell.

The patent application was filed on November 6, 2018 (16/181,372).

Memory storage and operating with multiple modes for refresh operation
Winbond Electronics Corporation, Taichung, Taiwan, has been assigned a patent (10,818,335) developed by Lin, Che-Min, and Wang, Hsi-Yuan, Taichung, Taiwan, for memory storage apparatus and operating method with multiple modes for refresh operation.

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory storage apparatus having a plurality of operating modes is provided. The memory storage apparatus includes a memory control circuit and a memory cell array circuit. The memory control circuit controls the memory storage apparatus to operate in one of the operating modes. The memory control circuit controls the memory storage apparatus to operate in a first operating mode and controls the memory storage apparatus to switch from the first operating mode to a second operating mode to refresh storage data of the memory cell array circuit. The memory storage apparatus operates in a third operating mode to refresh storage data in the memory storage apparatus. An operating voltage of the memory storage apparatus operating in the second operating mode is smaller than an operating voltage of the memory storage apparatus operating in the third operating mode.

The patent application was filed on March 9, 2017 (15/453,913).

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