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National University of Singapore Assigned Patent

Spin orbit torque MRAM structures

National University of Singapore, Singapore, has been assigned a patent (10,943,951) developed by Chen, Jingsheng, Deng, Jinyu,and Liu, Liang, Singapore, Singapore, for spin orbit torque magnetic random access memory structures and methods for fabrication.

The abstract of the patent published by the U.S. Patent and Trademark Office states: In one example embodiment, a SOT-MRAM includes a storage unit having a Co.sub..alpha.X.sub..beta.Pt.sub..gamma. based free layer. The storage unit includes a bottom electrode and the Co.sub..alpha.X.sub..beta.Pt.sub..gamma. based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the Co.sub..alpha.X.sub..beta.Pt.sub..gamma. based free layer, and a fixed layer over the tunnel barrier layer. The Co.sub..alpha.X.sub..beta.Pt.sub..gamma. based free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.

The patent application was filed on April 3, 2019 (16/374,410).

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