Natero Assigned Two Patents

Programing DDR compatible open architecture resistive change element arrays
Nantero, Inc., Woburn, MA, has been assigned a patent (10,937,498) developed by Bertin, Claude L., Venice, FL, for “methods for programing DDR compatible open architecture resistive change element arrays.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. Each row of resistive change elements includes a pair of reference elements and a sense amplifier. The reference elements are resistive components with electrical resistance values between the resistance corresponding to a SET condition and the resistance corresponding to a RESET condition within the resistive change elements being used in the array. A high speed READ operation is performed by discharging one of a row’s bit lines through a resistive change element selected by a word line and simultaneously discharging the other of the row’s bit lines through of the reference elements and comparing the rate of discharge on the two lines using the row’s sense amplifier. Storage state data are transmitted to an output data bus as high speed synchronized data pulses. High speed data is received from an external synchronized data bus and stored by a PROGRAM operation within resistive change elements in a memory array configuration.”

The patent application was filed on August 31, 2020 (17/007,735).

Accessing 1-R resistive change element arrays
Nantero, Inc., Woburn, MA, has been assigned a patent (10,937,497) developed by Bertin, Claude L., Venice, FL, and Cleveland, Lee, Santa Clara, CA, for “methods for accessing 1-R resistive change element arrays.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programing methods that use specific biasing of array lines to provide sufficient programing currents through only selected cells.”

The patent application was filed on January 6, 2020 (16/735,643).