Spin Memory Assigned Two Patents

Utilizing serial and parallel configurations of magnetic memory
Spin Memory, Inc., Fremont, CA, has been assigned a patent (10,937,478) developed by Bozdag, Kadriye Deniz, Sunnyvale, CA, Gajek, Marcin, Berkeley, CA, El Baraji, Mourad, and Ryan, Eric Michael, Fremont, CA, for “systems and methods utilizing serial and parallel configurations of magnetic memory devices.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An apparatus includes two or more magnetic tunnel junctions (MTJs) including a first MTJ having a first magnetic characteristic and a second MTJ having a second magnetic characteristic. The first magnetic characteristic is distinct from the second magnetic characteristic. The first magnetic characteristic is based on a first magnetic anisotropy and a first offset field on a first storage layer of the first MTJ. The second magnetic characteristic is based on a second magnetic anisotropy and a second offset field on a second storage layer of the second MTJ, The apparatus further includes a metallic separator coupling the first MTJ with the second MTJ, wherein the first MTJ and the second MTJ are arranged in series.”

The patent application was filed on July 9, 2019 (16/506,878).

Manufacturing scalable spin-orbit torque (SOT) magnetic memory
Spin Memory, Inc., Fremont, CA, has been assigned a patent (10,930,843) developed by Araki, Satoru, San Jose, CA, for a “process for manufacturing scalable spin-orbit torque (SOT) magnetic memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method of fabricating a magnetic storage device includes depositing a first conductive material. The method further includes electrically isolating distinct instances of the first conductive material to form a first wire extending along a first direction. The method further includes depositing, on the distinct instances of the first conductive material, a set of device layers. The method further includes electrically isolating distinct instances of the device layers to form spin orbit torque magnetic random access memory (SOT-MRAM) devices positioned on distinct instances of the first conductive material. The method further includes depositing, on the distinct instances of the device layers, a layer of a second conductive material and electrically isolating a plurality of distinct instances of the layer of the second conductive material to form a plurality of second wires extending along a second direction. The second direction is different from the first direction.”

The patent application was filed on December 17, 2018 (16/223,077).