IBM Assigned Twelve Patents

Fabrication of phase change memory cell in integrated circuit
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,840,447) developed by Li, Baozhen, South Burlington, VT, Yang, Chih-Chao, Glenmont, NY, Kim, Andrew Tae, Poughkeepsie, NY, and Linder, Barry, Hastings-on-Hudson, NY, for a “fabrication of phase change memory cell in integrated circuit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase change memory (PCM) cell in an integrated circuit and a method of fabricating it involve depositing a layer of PCM material on a surface of a dielectric, and patterning the layer of PCM material into a plurality of PCM blocks. Heater material is formed on both sidewalls of each of the plurality of the PCM blocks to form a plurality of PCM cells. Each of the plurality of the PCM blocks and the heater material on both the sidewalls represents a PCM cell. An additional layer of the dielectric is deposited above and between the plurality of the PCM cells, and trenches are formed in the dielectric. Trenches are formed in contact with each side of each of the plurality of the PCM cells. Metal is deposited in each of the trenches. Current flow in the metal heats the heater material of one of the PCM cells.”

The patent application was filed on March 12, 2019 (16/299,313).

3D phase change memory
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,833,269) developed by Wang, Wei, Yorktown Heights, NY, Pranatharthiharan, Balasubramanian, Watervliet, NY, Ok, Injo, Loudonville, NY, and Brew, Kevin W., Albany, NY, for a “3D phase change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method is presented for constructing a three-dimensional (3D) stack phase change memory (PCM) device. The method includes forming a plurality of stack layers over a plurality of conductive lines, the plurality of conductive lines formed within trenches of an inter-layer dielectric (ILD), forming isolation trenches extending through the plurality of stack layers, etching the plurality of stack layers to define an opening, filling the opening with at least a phase change material, and constructing vias to the plurality of conductive lines.”

The patent application was filed on May 7, 2019 (16/405,133).

Form phase change memory cell with self- align top electrode contact
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,833,267) developed by Ok, Injo, Loudonville, NY, Na, Myung-Hee, Lagrangeville, NY, Saulnier, Nicole, Slingerlands, NY, and Pranatharthiharan, Balasubramanian, Watervliet, NY, for “structure and method to form phase change memory cell with self- align top electrode contact.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A self-align metal contact for a phase control memory (PCM) element is provided that mitigates unwanted residual tantalum nitride (TaN) particles that would otherwise remain after patterning a TaN surface using an RIE process.”

The patent application was filed on October 26, 2018 (16/172,643).

Phase change memory array with integrated polycrystalline diodes
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,833,123) developed by Hekmatshoartabari, Bahman, White Plains, NY, Lam, Chung H., Peekskill, NY, Carta, Fabio, Yorktown Heights, NY, and BrightSky, Matthew J., Pound Ridge, NY, for a “phase change memory array with integrated polycrystalline diodes.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method for deactivating memory cells affected by the presence of grain boundaries in polycrystalline selection devices includes crystallizing a semiconductor layer in a diode stack to form a polycrystalline layer for selection diodes formed in a crossbar array. To achieve a crystalline state in phase change memory elements coupled to corresponding selection diodes perform an anneal. Memory cells having shunted selection diodes due to grain boundaries are identified by scanning the array using sense voltages. A second voltage larger than the sense voltages is applied to the phase change memory elements gated by the shunted selection diodes such that the phase change memory elements gated by the shunted diodes achieve a permanently high resistive state.”

The patent application was filed on January 15, 2019 (16/248,010).

Phase change memory
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,818,838) developed by Leobandung, Effendi, Stormville, NY, for a “phase change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An embodiment of the invention may include a method of forming, and the resulting semiconductor structure. The method may include removing a portion of an M.sub.x+1 layer insulator above an M.sub.x conductive layer located in an M.sub.x layer insulator. The method may include depositing an Mx+1 conductive layer in the removed portion of the M.sub.x+1 layer insulator. The method may include removing a portion of Mx+1 conductive layer to form a first portion of M.sub.x+1 conductive layer. The method may include forming spacers above the first portion of M.sub.x+1 conductive layer and in the removed portion of the M.sub.x+1 layer insulator. The method may include forming a second M.sub.x+1 conductive layer. The method may include forming a phase change material on the second M.sub.x+1 conductive layer.”

The patent application was filed on April 11, 2019 (16/381,375).

Composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,808,316) developed by Carta, Fabio, Pleasantville, NY, Masuda, Takeshi, Ossining, NY, Fraczak, Gloria W. Y., Queens, NY, Bruce, Robert, White Plains, NY, Sosa, Norma Edith, Ossining, NY, and BrightSky, Matthew J., Pound Ridge, NY, for a “composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method of forming a phase change material is provided in which the crystalline state resistance of the material can be controlled through controlling the flow ratio of NH.sub.3/Ar. The method may include providing a flow modulated chemical vapor deposition apparatus. The method may further include flowing gas precursors into the flow modulated chemical vapor deposition apparatus to provide the base material components of the phase change material. The method further includes flowing a co-reactant precursor and an inert gas into the flow modulated chemical vapor deposition, wherein adjusting ratio of the co-reactant precursor to the inert gas adjusts the crystalline state resistance of the phase change material.”

The patent application was filed on May 10, 2018 (15/976,443).

Self-aligned high density and size adjustable phase change memory
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,803,933) developed by Ok, Injo, Loudonville, NY, Na, Myung-Hee, Lagrangeville, NY, Saulnier, Nicole, Slingerlands, NY, and Pranatharthiharan, Balasubramanian, Watervliet, NY, for a “self-aligned high density and size adjustable phase change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method of forming a self-aligned phase change memory element is provided. A bottom electrode is formed on a landing pad of a phase change memory element. A layer of dielectric material over the bottom electrode and a via etched through the dielectric material to expose the bottom electrode. The via is lined with a GST phase change layer that is etched back from the top surface of the dielectric layer. The via is then filled with a nitride fill, at least of portion of which is etched back from the top surface of the dielectric layer. A top electrode metal is then deposited at the top of the via, wherein the top electrode material is coupled to the phase change material and nitride fill material.”

The patent application was filed on August 21, 2018 (16/107,129).

Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,784,313) developed by Gong, Nanbo, White Plains, NY, Ando, Takashi, Tuckahoe, NY, and Cohen, Guy M., Ossining, NY, for an “integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method is presented for forming a cell structure. The method includes constructing a resistive random access memory (RRAM) device, constructing a phase change memory (PCM) device in series with the RRAM device such that one of the electrodes of the PCM device is connected to a reactive electrode of the RRAM device, and connecting a complementary metal oxide semiconductor (CMOS) inverter to the RRAM and PCM devices to individually control switching behaviors of the RRAM and PCM devices.”

The patent application was filed on June 11, 2019 (16/436,999).

Method for manufacturing phase change memory
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,770,656) developed by Fraczak, Gloria Wing Yun, Queens, NY, Brightsky, Matthew, Pound Ridge, NY, Lam, Chung Hon, Carta, Fabio, Yorktown Heights, NY, Bruce, Robert, White Plains, NY, Masuda, Takeshi, Yorktown Heights, NY, and Suu, Koukou, Tokyo, Japan, for a “method for manufacturing phase change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.”

The patent application was filed on September 20, 2018 (16/136,464).

Phase change memory with patterning scheme for tantalum nitride and silicon nitride layers
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,741,756) developed by Ok, Injo, Loudonville, NY, Saulnier, Nicole, Slingerlands, NY, Saraf, Iqbal R., Cobleskill, NY, and Brew, Kevin W., Albany, NY, for a “phase change memory with a patterning scheme for tantalum nitride and silicon nitride layers.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method of forming a phase change memory device is provided. The method includes depositing an electrode layer on a phase change material core, and forming a sacrificial layer on the electrode layer. The method further includes depositing a planarization layer on the sacrificial layer, and depositing an anti-reflective coating on the planarization layer. The method further includes forming a template on the anti-reflective coating, and removing a portion of the anti-reflective coating, a portion of the planarization layer, and a portion of the sacrificial layer to form a reduced height sacrificial layer and a sacrificial layer section beneath the planarization layer section. The method further includes removing the anti-reflective coating section and planarization layer section to expose the sacrificial layer section, and removing the reduced height sacrificial layer and a portion of the electrode layer to form a top electrode on the phase change material core.”

The patent application was filed on May 29, 2019 (16/425,311).

Phase change memory with gradual resistance change
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,720,575) developed by Cheng, Kangguo, Schenectady, NY, for a “phase change memory with gradual resistance change.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A phase change memory cell is provided that includes a phase change material-containing structure sandwiched between first and second electrodes. The phase change material-containing structure has a resistance that changes gradually, and thus may be used in analog or neuromorphic computing. The phase change material-containing structure may contain a plurality of phase change material pillars, wherein each phase change material pillar has a different phase change material composition. Alternatively, the phase change material-containing structure may contain a doped phase change material layer in which a dopant concentration decreases laterally inward from an outermost surface thereof.”

The patent application was filed on September 12, 2019 (16/569,246).

Phase change memory with doped silicon germanium alloy-containing electrodes and air gap-containing spacer
International Business Machines Corporation, Armonk, NY, has been assigned a patent (10,714,684) developed by Cheng, Kangguo, Schenectady, NY, for a “phase change memory with doped silicon germanium alloy-containing electrodes and air gap-containing spacer.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A PCM cell is provided that includes a phase change memory material that is sandwiched between top and bottom electrodes which are both composed of a doped silicon germanium alloy. A doped silicon germanium alloy has good electrical conductivity, while having a lower thermal conductivity than conventional conductive materials such as TiN or W that are typically used in PCM cells. The presence of the doped silicon germanium alloy mitigates heat loss in the PCM cell thus reducing reset current and, in some embodiments, thermal cross-talk between adjacent PCM cells. Further reduction of heat loss can be obtained by providing an airgap-containing dielectric spacer laterally adjacent to the PCM cell.”

The patent application was filed on July 2, 2018 (16/025,534).