National Taiwan Normal University Assigned Patent

National Taiwan Normal University, Taipei, Taiwan, has been assigned a patent (10,872,966) developed by Cheng, Chun-Hu, Taipei, Taiwan, for a “storage memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A storage memory device includes a vertical field effect transistor including a semiconductor substrate, a pillar extending upwardly from the substrate and containing a source, a drain, and a channel disposed therebetween, a first insulating layer surrounding the channel, a stacked structure surrounding the first insulating layer, and a gate unit. The stacked structure includes a charge trapping layer and a composite element. The composite element includes a ferroelectric layer made of a doped hafnium oxide-based material that has a predominantly orthorhombic phase and exhibits a negative capacitance, and an antiferroelectric layer made of a zirconium oxide-based material that has a predominantly tetragonal phase.”

The patent application was filed on November 7, 2019 (16/676,669).