Kioxia and SK hynix Assigned Patent

Toshiba Memory Corp. (now Kioxia Corp.) Tokyo, Japan, and SK hynix, Inc., Gyeonggi-Do, Korea, has been assigned a patent (10,873,021) developed by Eeh, Young Min, Seongnam-si Gyeonggi-do, Korea, Watanabe, Daisuke, Yokkaichi Mie, Japan, Lee, Jae-Hyoung, Seoul, Korea, Nagase, Toshihiko, Tokyo, Japan, Sawada, Kazuya, Oikawa, Tadaaki, Seoul, Korea, Yoshino, Kenichi, Seongnam-si Gyeonggi-do, Korea, and Isoda, Taiga, Seoul, Korea, for “magnetic device and manufacturing method of magnetic device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.”

The patent application was filed on September 6, 2018 (16/123,846).