R&D: Bidirectional-Nonlinear Threshold Switching Behaviors and Thermally Robust Stability of ZnTe Selectors by Nitrogen Annealing
Possible characteristics of electrically and thermally advanced TS nature described by diverse structural and electrical analyses through Poole–Frankel conduction model
This is a Press Release edited by StorageNewsletter.com on November 30, 2020 at 2:11 pmNature Scientific Reports has published an article written by Gabriel Jang, Novel Functional Materials and Device Laboratory, Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, 04763, Republic of Korea, Mihyun Park, Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul, 04763, Republic of Korea, Da Seul Hyeon, Novel Functional Materials and Device Laboratory, Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, 04763, Republic of Korea, WooJong Kim, Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul, 04763, Republic of Korea, JungYup Yang, Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea, and JinPyo Hong, Novel Functional Materials and Device Laboratory, Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, 04763, Republic of Korea, and Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
Abstract: “Three-dimensional stackable memory frames involving the integration of two-terminal scalable crossbar arrays are expected to meet the demand for high-density memory storage, fast switching speed, and ultra-low power operation. However, two-terminal crossbar arrays introduce an unintended sneak path, which inevitably requires bidirectional nonlinear selectors. In this study, the advanced threshold switching (TS) features of ZnTe chalcogenide material-based selectors provide bidirectional threshold switching behavior, nonlinearity of 104, switching speed of less than 100ns, and switching endurance of more than 107. In addition, thermally robust ZnTe selectors (up to 400℃) can be obtained through the use of nitrogen-annealing treatment. This process can prevent possible phase separation phenomena observed in generic chalcogenide materials during thermal annealing which occurs even at a low temperature of 250℃. The possible characteristics of the electrically and thermally advanced TS nature are described by diverse structural and electrical analyses through the Poole–Frankel conduction model.“
Subscribe to our free daily newsletter
