CEA, CNRS, and Grenoble INP Assigned Patent

Commissariat à l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, Centre National de la Recherche Scientifique (CNRS), Paris, France, and Institut Polytechnique de Grenoble (Grenoble INP), Grenoble, France, has been assigned a patent (10,818,329) developed by Perrissin-Fabert, Nicolas, Dieny, Bernard, Prejbeanu, Lucian, and Sousa, Ricardo, Grenoble, France, for a “magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junction.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A magnetic tunnel junction with out-of-plane magnetisation includes a storage layer, a reference layer, and a tunnel barrier layer. The two magnetisation states of the storage layer are separated by an energy barrier including a contribution due to the shape anisotropy of the storage layer and a contribution of interfacial origin for each interface of the storage layer. The storage layer has a thickness comprised between 0.8 and 8 times a characteristic dimension of a planar section of the tunnel junction. The contribution to the energy barrier due to the shape anisotropy of the storage layer is at least two times greater and preferably at least 4 times greater than the contributions to the energy barrier of interfacial origin.”

The patent application was filed on February 22, 2019 (16/282,873).