Yangtze Memory Technologies Assigned Patent

Yangtze Memory Technologies Co., Ltd., Wuhan, China, has been assigned a patent (10,811,071) developed by Li, Yue Ping, and Hou, Chun Yuan, Wuhan, China, for a “three-dimensional memory device with static random-access memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Embodiments of three-dimensional (3D) memory devices with a 3D memory device includes a first semiconductor structure having a peripheral circuit, an array of SRAM cells, and a first bonding layer having a plurality of first bonding contacts. The 3D memory device also includes a second semiconductor structure having an array of 3D NAND memory strings and a second bonding layer including a plurality of second bonding contacts and a bonding interface between the first bonding layer and the second bonding layer, wherein the first bonding contacts are in contact with the second bonding contacts at the bonding interface.”

The patent application was filed on June 27, 2019 (16/455,656).