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Weebit Nano Completes Stabilisation Process and Moves Closer to Silicon Oxide ReRAM Production

Conducted with Leti, final stage in stabilisation process reduced cell to cell and die to die non-uniformity, further increased level of functional cells, and ensured batch-to-batch repeatability.

Weebit Nano Ltd. has completed its technology stabilisation process and is now ready to transfer its technology to a production fab.

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Conducted with Leti, the final stage in the stabilisation process reduced the cell to cell and die to die non-uniformity, further increased the level of functional cells, and ensured batch-to-batch repeatability.

These improvements to the company’s silicon oxide ReRAM technology are a milestone on the path to productisation and commercialisation, creating a foundation for the next steps, including the module IP design for the embedded market, standalone memory for mass storage, and production in a foundry.

The final stabilisation phase continued the improvement of the firm’s memory functionality, exceeding expectations and bringing the level of functional cells to over 99%, a key requirement when moving to production. In addition, optimised integration showed wafer to wafer reproducibility for various programming conditions, which means that different memory cells in different areas of a wafer and across different wafers in the batch present the same behaviour (similar resistivity response to various voltage levels).

Coby Hanoch, CEO, said: “The successful completion of the stabilisation process follows four years of extensive R&D by the joint Weebit and Leti engineering teams, which has created a unique and highly competitive ReRAM technology. Our close collaboration with Leti will continue, as we constantly strive to improve and further optimise the technical parameters of our silicon oxide ReRAM“… “In parallel to completing the stabilisation process which has reinforced the capabilities of our technology, we are moving closer to commercialisation, engaging in discussions with a production partner and working towards transferring our IP and achieving technology qualification in the partner’s fab.

Read also:
Weebit Nano and Leti Filed Patent on Method to Implement Multi-Level Storage in ReRAM
Multi-level is ability to store more than 1 bit per cell, increasing storage capacity without increasing number of memory cells or memory array size.
September 1, 2020 | Press Release
Weebit Nano Completed ReRAM First Stage of ‘Stabilisation’ Process Key Milestone on Path to Productisation
Objective of phase was to verify that company’s production process is repeatable and consistent, to reduce chances for defects and therefore improve wafer yield.
August 20, 2020 | Press Release
Weebit Nano Raised $6.6 Million
Upsized two-tranche placement of circa $6.6 million.
July 1, 2020 | Press Release

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