Purdue Research Foundation Assigned Patent

Purdue Research Foundation, West Lafayette, IN, has been assigned a patent (10,756,263) developed by Appenzeller, Joerg, Zhang, Feng, Zhu, Yuqi, West Lafayette, IN, Davydov, Albert V., North Potomac, MD, Krylyuk, Sergiy, Montgomery Village, MD, Zhang, Huairuo, Gaithersburg, MD, and Bendersky, Leonid A., Montgomery Village, MD, for a “phase transition based resistive random-access memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2H.sub.d phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.”

The patent application was filed on August 23, 2018 (16/110,376).