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Sunrise Memory Assigned Patent

Capacitive-coupled non-volatile thin-film transistor strings in 3D

Sunrise Memory Corp. (start-up in stealth mode), Fremont, CA, has been assigned a patent (10,748,629) developed by Harari, Eli, Saratoga, CA , for a “capacitive-coupled non-volatile thin-film transistor strings in three dimensional.

The abstract of the patent published by the U.S. Patent and Trademark Office states: Multi-gate NOR flash thin-film transistor (TFT) string arrays are organized as three dimensional stacks of active strips. Each active strip includes a shared source sublayer and a shared drain sublayer that is connected to substrate circuits. Data storage in the active strip is provided by charge-storage elements between the active strip and a multiplicity of control gates provided by adjacent local word-lines. The parasitic capacitance of each active strip is used to eliminate hard-wire ground connection to the shared source making it a semi-floating, or virtual source. Pre-charge voltages temporarily supplied from the substrate through a single port per active strip provide the appropriate voltages on the source and drain required during read, program, program-inhibit and erase operations. TFTs on multiple active strips can be pre-charged separately and then read, programmed or erased together in a massively parallel operation.

The patent application was filed on August 21, 2018 (16/107,118).

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