R&D: Special Issue on Phase-Change Memories – Materials Science, Technological Applications and Perspectives

Journal of Physics D: Applied Physics has published a “Special Issue on Phase-Change Memories“ written by Massimo Longo, CNR-IMM, Italy, Paolo Fantini, Micron Technology, Inc., Italy, and Pierre Noé, CEA-LETI, France.

Mushroom-type PCM cell in RESET
(image courtesy of the Guest Editors)

The hierarchy of data storage systems has pushed the development of alternative and higher performing memory concepts using novel functional materials. In particular, a high interest is related to phase-change memory (PCM or PRAM), since it offers high-speed operation, endurance and downscaling, even beyond lithographic limits. Therefore, they are emerging as non-charge-based devices, leading contenders for storage class memories, that should fill the performance gap between volatile DRAM and non-volatile flash memories; important crucial aspects for their future development are the increase of the storage capacity per cell and the reduction of power consumption.

This volume intends to collect the latest developments for scientific and technological advances of the PCM, so as to provide an exhaustive overview of the state of the art and future trends.

Topics will include:

• Electrical and functional analysis of PCM

• New phase-change materials, alloys and phases

• Scalability, integration and nano-structuring of PCM

• van der Waals-layered super-lattices and interfacial phase-change memories (iPCM)

• Scaling effects on phase-change materials, nanowires and nanostructures

• Modeling and simulation of phase-change materials and devices

• Device electrical characterization, performance and reliability issues (data retention, programming current, resistance drift, endurance, etc.)

• Neuromorphic architectures for logic and data storage

• Phase-change materials for novel applications