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R&D: Special Issue on Phase-Change Memories – Materials Science, Technological Applications and Perspectives

Crucial aspects for future development increase storage capacity per cell and reduce of power consumption.

Journal of Physics D: Applied Physics has published a “Special Issue on Phase-Change Memories“ written by Massimo Longo, CNR-IMM, Italy, Paolo Fantini, Micron Technology, Inc., Italy, and Pierre Noé, CEA-LETI, France.
Mushroom-type PCM cell in RESET...

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