R&D: Multi-Level Resistance Uniformity of Double Pinned Perpendicular Magnetic-Tunnel-Junction Spin-Valve Depending on Top MgO Barrier Thickness
In order to utilize perpendicular spin-torque-transfer MRAM as storage class memory, achievement of performing MLC operation important in increasing integration density of p-STT MRAM
This is a Press Release edited by StorageNewsletter.com on July 22, 2020 at 2:16 pmAIP Advances has published an article written by Han-Sol Jun, MRAM Center, Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, South Korea, Jin-Young Choi, MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, South Korea, Kei Ashiba, MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, South Korea, and Wafer Engineering Department, SUMCO Corporation, 1-52 Kubara, Imari, Saga 849-4256, Japan, Sun-Hwa Jung1, Miri Park,MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, South Korea, Jong-Ung Baek, MRAM Center, Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, South Korea, Tae-Hun Shim, RAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, South Korea, and Jea-Gun Park, MRAM Center, Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, South Korea, and MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, South Korea.
Abstract: “In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM. For a double pinned perpendicular magnetic tunneling junction spin-valve performing MLC (i.e., four-resistance level) operation, the uniformity in the resistance difference between four-level resistances was investigated theoretically and experimentally. The uniformity in the resistance difference between four-level resistances was strongly dependent on the top MgO tunneling-barrier thickness. Particularly, the most uniform resistance difference between four resistance states could be achieved at a critical top-MgO tunneling thickness (i.e.,∼1.15 nm).“
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