Shenzhen EpoStar Electronics Assigned Six Patents

Command processing method and storage controller
Shenzhen EpoStar Electronics Ltd. Co., Shenzhen, China, has been assigned a patent (10,599,364) developed by Chen, Tsan-Lin, Hsinchu County, Taiwan, for “command processing method and storage controller.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A command processing method and a storage controller are provided. The command processing method is adapted for the storage controller. The storage controller includes a processor and peripherals. The command processing method includes: disposing a first command buffer and a second command buffer in the processor, disposing a synchronizer in the storage controller, the synchronizer changing a value of a flag at a predetermined interval to set the first command buffer or the second command buffer valid, and when the first command buffer is valid and the processor issues a command, the processor temporarily stores the command in the first command buffer and one of the peripherals accesses the command in the first command buffer to executes a corresponding operation.”

The patent application was filed on July 26, 2018 (16/046,994).

Memory management and storage controller
Shenzhen EpoStar Electronics Ltd. Co., Shenzhen, China, has been assigned a patent (10,579,518) developed by Hsiao, Yu-Hua, Hsinchu County, Taiwan, and Liu, Li-Hsun, Taoyuan, Taiwan, for “memory management method and storage controller.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory management method is provided. The method includes selecting a target physical programming unit, using a first read voltage corresponding to a first type physical page of the target physical programming unit to read a plurality of target memory cells of the target physical programming unit, so as to calculate a first bit value ratio, if the first bit value ratio is not smaller than a first preset threshold, using a second read voltage corresponding to the first type physical page of the target physical programming unit to read the plurality of target memory cells of the target physical programming unit, so as to calculate a second bit value ratio, and determining whether the first type physical page of the target physical programming unit is empty by comparing the first bit value ratio and the second bit value ratio.”

The patent application was filed on August 28, 2018 (16/114,248).

Memory management and storage controller
Shenzhen EpoStar Electronics Ltd. Co., Shenzhen, China, has been assigned a patent (10,579,306) developed by Huang, Shang-Pin, Hsieh, Hung-Chih, and Hsiao, Yu-Hua, Hsinchu County, Taiwan, for “memory management method and storage controller.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory management method is provided. The method includes storing an acquired first command into a command queue, and setting a command phase value of the first command according to a current command phase, wherein in response to determining that the first command is a flush command, calculating a command phase count value corresponding to the current command phase, and adjusting the current command phase, selecting a new target command from the command queue, and executing the target command according to a target command phase value of the target command and a corresponding target command phase count value, wherein the target command phase count value which is not a preset value is adjusted, determining, according to the adjusted target command phase count value, whether to respond to a host system that an execution of a target flush command corresponding to the target command phase value is completed.”

The patent application was filed on October 30, 2018 (16/174,294).

Data reading, storage controller and storage device
Shenzhen EpoStar Electronics Ltd. Co., Shenzhen, China, has been assigned a patent (10,565,053) developed by Hsiao, Yu-Hua, Hsinchu County, Taiwan, for “data reading method, storage controller and storage device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory management method is provided. The method includes: using a preset read voltage, a left preset read voltage set and a right preset read voltage set corresponding to the preset read voltage to perform a read operation on a target codeword to obtain a hard bit codeword, a left bit codeword and a right bit codeword, respectively, performing iterative decoding operations on each of the hard bit codeword, the left bit codeword and the right bit codeword to identify a trust codeword having a smallest syndrome among the hard bit codeword, the left bit codeword and the right bit codeword, using the hard bit codeword, the left bit codeword, the right bit codeword and the trust codeword to perform a calibration on a log-likelihood ratio table of the iterative operations, so as to update the log-likelihood ratio table to a calibrated log-likelihood ratio table.”

The patent application was filed on May 28, 2019 (16/423,162).

Memory management and storage controller
Shenzhen EpoStar Electronics Ltd. Co., Shenzhen, China, has been assigned a patent (10,515,712) developed by Hsiao, Yu-Hua, Hsinchu County, Taiwan, and Chang, Chia-Wei, Kaohsiung, Taiwan, for “memory management method and storage controller.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory management method and a storage controller using the same are provided. The method includes reading a target word-line to identify a plurality of raw Gray code indexes corresponding to a plurality of memory cells of the target word-line, performing a decoding operation on raw data of the target word-line to identify a plurality of decoded Gray code indexes corresponding to the memory cells, calculating a plurality of Gray code absolute bias values corresponding to the memory cells according to the raw Gray code indexes and the decoded Gray code indexes, and identifying one or more abnormal memory cells among the memory cells according to the Gray code absolute bias values, and recording the one or more abnormal memory cells into an abnormal memory cell table, wherein a Gray code absolute bias value of each of the one or more abnormal memory cells is greater than a bias threshold.”

The patent application was filed on October 31, 2018 (16/175,860).

Memory management and storage controller
Shenzhen EpoStar Electronics Ltd. Co., Shenzhen, China, has been assigned a patent (10,509,583) developed by Hsiao, Yu-Hua, Hsinchu County, Taiwan, Ko, Chin-Yen, Changhua County, Taiwan, and Liu, Li-Hsun, Taoyuan, Taiwan, for “memory management method and storage controller.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory management method is provided. The method includes performing a read retry operation to a target block stripe, and identifying a read retry recording table of the target block stripe, selecting a target read retry index value from one or more first read retry index values according to the one or more first read retry index values in the read retry recording table, using a target read retry option corresponding to the read retry index value to perform a read operation to the target block stripe, in response to determining that the read operation is successful, determining that the read retry operation is completed, and updating the read retry recording table according to the target read retry index value, and determining whether to perform a wear leveling operation to the target block stripe according to the latest read retry recording table.”

The patent application was filed on September 20, 2018 (16/136,282).