NaMLab Assigned Patent

NaMLab GmbH, Dresden, Germany, has been assigned a patent (10,600,808) developed by Schroder, Uwe, Dresden, Germany, for a “ferroelectric memory cell for an integrated circuit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”An integrated circuit comprises a ferroelectric memory cell including an oxide storage layer, an electrode layer, and an interface layer. The oxide storage layer comprises a ferroelectric material that is at least partially in a ferroelectric state. The ferroelectric material comprises, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr). The interface layer is disposed between the oxide storage layer and the electrode layer and includes at least one element with a higher valence value than Hf or Zr.”

The patent application was filed on September 5, 2017 (15/695,533).