Spin Memory Assigned Patent
Adjustable stabilizer/polarizer method for MRAM with enhanced stability and switching
By Francis Pelletier | March 16, 2020 at 2:31 pmSpin Memory, Inc., Fremont, CA, has been assigned a patent (10,580,827) developed by Watts, Steven, San Jose, CA, Wolf, Georg Martin, San Francisco, CA, Bozdag, Kadriye Deniz, Sunnyvale, CA, Kardasz, Bartlomiej, Pleasanton, CA, and Pinarbasi, Mustafa, Morgan Hill, CA, for an “adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A magnetoresistive random-access memory, (MRAM) is disclosed. The MRAM bit cell consists of a magnetic tunnel junction stack having a significantly improved performance of the magnetic storage layer. The MRAM device utilizes a polarizer layer with a magnetic vector that can switch between a stabilizing magnetic direction and a programming magnetic direction.”
The patent application was filed on November 16, 2018 (16/192,972).
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