Storart Technology Assigned Patent

Storart Technology (Shenzhen) Co., Ltd., Shenzhen, Guangdong, China, has been assigned a patent (10,573,393) developed by Peng, Hsiang-En, and Wu, Sheng-Han, Hsinchu, Taiwan, for a “method for detecting storing states of solid state storage device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method for detecting storing states of a solid state storage device is provided, including steps of: applying sensing voltages to memory units, comparing threshold voltages of the memory units with the sensing voltages and accordingly to define the storing states including a strong correct region, a weak correct region, a strong error region and a weak error region, in which the memory units are classified, calculating the number of the memory units in the storing states, calculating a strong correct ratio of the number of the memory units in the strong correct region to the number of the memory units in the strong and weak correct regions, calculating a strong error ratio of the number of the memory units in the strong error region to the number of the memory units in the strong and weak error regions, and generating a log-likelihood ratio based on said ratios.”

The patent application was filed on November 23, 2018 (16/198,996).