SK hynix and Sogang University Research Foundation Assigned Patent

SK hynix Inc., Icheon, Korea, and Sogang University Research Foundation, Seoul, Korea, has been assigned a patent (10,546,934) developed by Choi, Woo Young, Seoul, Korea, for “non-volatile memory device and method of fabricating the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory includes a channel layer, a data storage layer disposed on the channel layer, a plurality of control gates arranged on the data storage layer and spaced apart from one another, and conductive cover layers disposed on sidewalls of the control gates facing each other. The plurality of control gates includes a first conductor having a first work function. The conductive cover layers include a second conductor having a second work function that is greater than the first work function.”

The patent application was filed on July 12, 2017 (15/647,692).