IBM and Samsung Electronics Assigned Two Patents

Magnetic exchange coupled MTJ free layer having low switching current and high data retention
International Business Machines Corporation, Armonk, NY, and Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, Korea, have been assigned a patent (10,510,391) developed by Hu, Guohan, Yorktown Heights, NY, Park, Jeong-Heon, Hwaseong-si, Korea, and Worledge, Daniel C., San Jose, CA, for a “magnetic exchange coupled MTJ free layer having low switching current and high data retention.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Embodiments of the invention are directed to a magnetic tunnel junction, (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.”

The patent application was filed on November 3, 2017 (15/802,838).

Magnetic exchange coupled MTJ free layer having low switching current and high data retention
International Business Machines Corporation, Armonk, NY, and Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, Korea, have been assigned a patent (10,510,390) developed by Hu, Guohan, Yorktown Heights, NY, Park, Jeong-Heon, Hwaseong-si, Korea, and Worledge, Daniel C., San Jose, CA, for a “magnetic exchange coupled MTJ free layer having low switching current and high data retention.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”Embodiments of the invention are directed to a magnetic tunnel junction, (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.”

The patent application was filed on June 7, 2017 (15/616,297).