Vanguard International Semiconductor Assigned Patent

Vanguard International Semiconductor Corporation, Hsinchu, Taiwan, has been assigned a patent (10,515,971) developed by Kumar, Ankit, Ranchi, India, Kumar, Manoj, Dhanbad, India, and Lee, Chia-Hao, New Taipei, Taiwan, for “flash memories and methods for manufacturing the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A method for manufacturing a flash memory includes forming a first conductive layer on a semiconductor substrate, and forming a patterned mask layer on the first conductive layer, wherein the first conductive layer is exposed by an opening of the patterned mask layer. The method also includes forming a second conductive layer on the patterned mask layer, wherein the second conductive layer extends into the opening. The method further includes performing a first etching process on the second conductive layer to form a spacer on a sidewall of the opening, and performing an oxidation process to form an oxide structure in the opening. In addition, the method includes performing a second etching process by using the oxide structure as a mask to form a floating gate, and forming a source region and a drain region in the semiconductor substrate.”

The patent application was filed on December 11, 2017 (15/837,458).