Weebit Nano and Leti Filed Three Patents for Silicon Oxide ReRAM Technology

Weebit Nano Ltd. and its development partner Leti have filed 3 new patents for Silicon Oxide (SiOx) ReRAM technology.

These patents from the companies use developed smart algorithms to increase the reliability and yield of ReRAM memory cells and enable scalable immune ReRAM process improvements. Two patents identify failure modes, in which optimised smart programming algorithms then improve the window margin and array yield. The third patent improves process flows, allowing increased stability at scaled memory cells in geometries of 40nm and below.

These patents outline methods to overcome issues that stem from physical limitations, which are common in advanced geometries approaching atomic-level limitations, resulting in increased yield and ultimately revenues per wafer.

Coby Hanoch, CEO, Weebit Nano, said: “Developing disruptive technology for productisation is not only a result of great material science engineering, but also understanding and controlling the physics of the device. A company needs to develop sophisticated process flow techniques as well as smart algorithms to overcome challenges and control the physics of the manufacturing environment. Weebit and Leti invest on both fronts to create unique know-how that will enable simpler and lower-cost manufacturability, resulting in highly reliable and cost-effective ReRAM memory solutions.“

“These patents further fortify Weebit’s IP and create a unique package of process and memory control that will be incorporated in our future products, enabling us to increase the potential revenues from each wafer produced,” he added.

The company continues to refine its ReRAM technology in partnership with Leti in order to ensure it is attractive to potential customers. The firm remains on track to transfer its technology to a production fab by December 2020, and is continuing developments with a number of potential customers.