Dosilicon Assigned Patent

Dosilicon Co., Ltd., Shanghai, China, has been assigned a patent (10,461,091) developed by Kim, Jin Ho, Hwaseong-si, Korea, and Kang, Tae Gyoung, Yongin-si, Korea, for a “NAND flash memory device having facing bar and method of fabricating the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A NAND flash memory device having a facing bar and a method of fabricating the same are provided. The method includes forming one transistor or a plurality of stack transistors as cell transistors on two side surfaces of a facing bar to have transmission channels thereat. In this case, the height of the facing bar may be easily increased. Thus, not only a layout area of unit transistors including the cell transistors but also a layout area of cell strings may be minimized, and lengths of the transmission channels of the cell transistors may be sufficiently extended. As a result, according to the NAND flash memory device and the method of fabricating the same, the overall operating characteristics are improved.”

The patent application was filed on December 15, 2017 (15/843,516).