R&D: Environmentally Robust Memristor Enabled by Lead‐Free Double Perovskite for High‐Performance Information Storage

Nano Micro Small has published an article written by Xue-Feng Cheng, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123 P. R. China, Wen-Hu Qian College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123 P. R. China, and Testing and Analysis Center, Soochow University, Suzhou, 215123 P. R. China, Jia Wang, Chuang Yu, Jing-Hui He, Hua Li, Qing-Feng Xu, Dong-Yun Chen, Na-Jun Li, and Jian-Mei Lu, College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123 P. R. China.

Abstract: “Memristors are emerging as a rising star of new computing and information storage techniques. However, the practical applications are severely challenged by their instability toward harsh conditions, including high moisture, high temperatures, fire, ionizing irradiation, and mechanical bending. In this work, for the first time, lead‐free double perovskite Cs₂AgBiBr₆ is utilized for environmentally robust memristors, enabling highly efficient information storage. The memory performance of the typical indium‐tin‐oxide/Cs₂AgBiBr₆/Au sandwich‐like memristors is retained after 1000 switching cycles, 10⁵ s of reading, and 10⁴ times of mechanical bending, comparable to other halide perovskite memristors. Most importantly, the memristive behavior remains robust in harsh environments, including humidity up to 80%, temperatures as high as 453 K, an alcohol burner flame for 10 s, and ⁶⁰Co γ‐ray irradiation for a dosage of 5 × 10⁵ rad (SI), which is not achieved by any other memristors and commercial flash memory techniques. The realization of an environmentally robust memristor from Cs₂AgBiBr₆ with a high memory performance will inspire further development of robust electronics using lead‐free double perovskites.“